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Phototransistor

0104110000003355

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This is a metal encapsulated silicon phototransistor for applications that require light sensing.


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2,95 lei
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Valid in the limit of the available stock

The price includes the costs for collection, treatment and ellimination of WEEE

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Overview

The phototransistor is useful for building infrared sensors that can detect white or black.

The operation of these sensors is based on the emission of IR light by an LED and its mirroring or absorption by white or black surfaces.

This is a metal encapsulated silicon phototransistor for applications that require light sensing.


Specifications

  • Model: 3DU5C
  • Material: Silicon tube
  • Structure: NPN
  • Maximum operating voltage: 10V
  • Current with closed transistor: 0 .3uA
  • Current with open transistor: 0.5mA - 1mA
  • Power: 30mW
  • Length of wave: 880nm (IR)


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Phototransistor

Phototransistor

This is a metal encapsulated silicon phototransistor for applications that require light sensing.


See description for more details about the product.

Add to cart now!

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